fast ir fet? IRFH7182PBF 1 www.irf.com ? 2015 international rectifier submit datasheet feedback april 29, 2015 hexfet ? power mosfet v dss 100 v r ds(on) max (@ v gs = 10v) 3.9 ? m ??? q g (typical) 49 nc r g (typical) 0.9 ?? i d (@t c (bottom) = 25c) 157 a ? ? pqfn 5x6 mm notes ? through ? are on page 8 base part number package type standard pack orderable part number ? ? form quantity IRFH7182PBF pqfn 5mm x 6 mm tape and reel 4000 irfh7182trpbf applications ?? optimized for secondary side synchronous rectification ?? primary switch for high frequency 48v/60v telecom dc-dc power supplies ?? hot swap and active o-ring ?? bldc motor drive absolute maximum ratings ?? parameter max. units v gs gate-to-source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 23 a i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 157 i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 99 i dm pulsed drain current ? 320 p d @t a = 25c power dissipation 4.0 w p d @t c(bottom) = 25c power dissipation 195 linear derating factor 0.03 w/c t j operating junction and -55 to + 150 c t stg storage temperature range features benefits low r ds(on) (<3.9m ? ) lower conduction losses low thermal resistance to pcb (<0.64c/w) increased power density 100% rg tested increased reliability low profile (<1.05 mm) results in increased power density industry-standard pinout ?? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1 increased reliability
2 www.irf.com ? 2015 international rectifier submit datasheet feedback april 29, 2015 ? IRFH7182PBF ??? parameter typ. max. units r ? jc (bottom) junction-to-case ? ??? 0.64 r ? jc (top) junction-to-case ? ??? 15 c/w r ? ja junction-to-ambient ? ??? 31 r ? ja (<10s) junction-to-ambient ? ??? 19 thermal resistance d s g static @ t j = 25c (unless otherwise specified) ???? parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient ??? 62 ??? mv/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 3.1 3.9 m ? v gs = 10v, i d = 50a ? v gs(th) gate threshold voltage 2.0 ??? 3.6 v v ds = v gs , i d = 250a ? v gs(th) gate threshold voltage coefficient ??? -5.3 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a v ds = 80v, v gs = 0v i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v gfs forward transconductance 135 ??? ??? s v ds = 25v, i d = 50a q g total gate charge ??? 49 74 q gs1 pre-vth gate-to-source charge ??? 9.3 ??? ? v ds = 50v q gs2 post-vth gate-to-source charge ??? 3.1 ??? nc v gs = 10v q gd gate-to-drain charge ??? 15.8 ??? ? i d = 50a q godr gate charge overdrive ??? 21 ??? ? q sw switch charge (q gs2 + q gd ) ??? 19 ??? ? q oss output charge ??? 160 ??? nc v ds = 50v, v gs = 0v r g gate resistance ??? 0.9 ??? ? ? t d(on) turn-on delay time ??? 6.1 ??? v dd = 50v, v gs = 10v t r rise time ??? 6.2 ??? ns i d = 50a t d(off) turn-off delay time ??? 15 ??? ? r g = 1.0 ? t f fall time ??? 5.3 ??? ? c iss input capacitance ??? 3120 ??? v gs = 0v c oss output capacitance ??? 1440 ??? pf v ds = 50v c rss reverse transfer capacitance ??? 14 ??? ? ? = 1.0mhz diode characteristics ???? parameter min. typ. max. units conditions i s continuous source current ??? ??? 157 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 320 integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? 0.8 1.3 v t j = 25c, i s = 50a, v gs =0v ? t rr reverse recovery time ??? 65 98 ns t j = 25c, i f = 50a, v dd = 50v q rr reverse recovery charge ??? 113 170 nc di/dt = 100a/s ? avalanche characteristics ??? parameter typ. max. units e as (thermally limited) single pulse avalanche energy ? ??? 728 mj i ar avalanche current ? ??? 38 a
3 www.irf.com ? 2015 international rectifier submit datasheet feedback april 29, 2015 ? IRFH7182PBF fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature fig 6. typical gate charge vs . gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.0v 6.5v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60s pulse width tj = 150c vgs top 15v 10v 7.0v 6.5v 6.0v 5.5v 5.0v bottom 4.5v 2 3 4 5 6 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 50v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 102030405060 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v v ds = 20v i d = 50a
4 www.irf.com ? 2015 international rectifier submit datasheet feedback april 29, 2015 ? IRFH7182PBF fig 8. maximum safe operating area fig 9. maximum drain current vs. case temperature fig 10. threshold voltage vs. temperature fig 11. maximum effective transient thermal impedance, junction-to-case fig 7. typical source-drain diode forward voltage 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a i d = 1.0ma i d = 1.0a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 120 140 160 i d , d r a i n c u r r e n t ( a )
5 www.irf.com ? 2015 international rectifier submit datasheet feedback april 29, 2015 ? IRFH7182PBF fig 12. typical avalanche current vs. pulse width fig 13. on?resistance vs. gate voltage fig 14. maximum avalanche energy vs. drain current 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 2 3 4 5 6 7 8 9 10 11 12 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 50a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 500 1000 1500 2000 2500 3000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 12a 24a bottom 38a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse)
6 www.irf.com ? 2015 international rectifier submit datasheet feedback april 29, 2015 ? IRFH7182PBF fig 15. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 18. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 19. gate charge waveform fig 17a. switching time test circuit fig 17b. switching time waveforms fig 16a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 16b. unclamped inductive waveforms vdd ?
7 www.irf.com ? 2015 international rectifier submit datasheet feedback april 29, 2015 ? IRFH7182PBF note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 5x6 outline "f" package details xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pqfn 5x6 outline "f" part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techni ques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf c l c l c l c l
8 www.irf.com ? 2015 international rectifier submit datasheet feedback april 29, 2015 ? IRFH7182PBF ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ pqfn 5x6 outline "f" tape and reel ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standard at the time of product release. notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l = 1mh, r g = 50 ? , i as = 38a. ? pulse width ? 400s; duty cycle ? 2%. ? r ? is measured at t j of approximately 90c. ? when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf qualifiction information ? ? qualification level ? industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level pqfn 5mm x 6mm msl1 (per jedec j-std-020d ??) rohs compliant yes note: for the most current drawing please refer to ir website at http://www.irf.com/package/ bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimension design to accommodate the component width dimension design to accommodate the component lenght dimension design to accommodate the component thickness pitch between successive cavity centers overall width of the carrier tape description type package 5 x 6 pqfn note: all dimension are nominal diameter reel qty wid th reel (mm) ao (mm) bo (mm) ko (mm) p1 (mm) w quadrant pin 1 (inch) w1 (mm) 13 4000 12.4 6.300 5.300 1.20 8.00 12 q1
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